Ultra-high Resolution Electron Beam Lithography system RAITH150 Two
The RAITH150 Two Electron Beam lithography(EBL) systemexposes structures smaller than 8 nm and works with sample sizes from a few mm to 8-inch wafers.
- TFE filament
- 1.6 nm spot size
- Travel range 150 ×150 mm²
- 1 nm stage resolution
- Max. 8’’ wafers and 7’’ masks
- < 8 nm linewidth
- <35nm [m]+3s stitching
- <35nm [m]+3s overlay
- 20 MHz pattern generator
- Environment tolerant shield