New insights into lattice vibrations in κ-Ga₂O₃
/ Announcements
A PDI-led international research team has achieved the first comprehensive experimental characterization of phonon modes in single-domain κ-Ga₂O₃, a promising ultra-wide-bandgap semiconductor for next-generation electronic and optoelectronic devices. The results have been published in Advanced Electronic Materials.
Using polarization-resolved Raman spectroscopy, the researchers identified and assigned a large number of Raman-active phonon modes, providing a detailed picture of the crystal’s lattice dynamics. Importantly, the study was carried out on single-domain material, enabling an unambiguous determination of phonon symmetries. This level of detail had not previously been achieved for this metastable gallium oxide phase.
The findings close a key knowledge gap for κ-Ga₂O₃. Phonons play a central role in determining thermal conductivity, electron-phonon interactions, and heat dissipation, all of which are critical for high-power and high-frequency electronic devices. The newly established experimental phonon dataset therefore provides an essential reference for theoretical modelling and for the design and optimisation of gallium-oxide-based technologies.
The work represents an international collaboration, bringing together researchers from Germany, Italy, the United Kingdom, and Japan, and highlights the value of cross-border expertise in advancing fundamental materials science with clear relevance for future electronic applications.
Title: Phonons in single‐domain κ‐Ga2O3 studied by polarization angle‐resolved Raman scattering
Authors: A. Wüthrich, B. M. Janzen, R. Gillen, H. Tornatzky, A. Ardenghi, O. Bierwagen, A. Sacchi, P. Mazzolini, M. Ries, T. Ogawa, H. Nishinaka, M. R. Wagner
Source: Adv. Electron. Mater., tba, e00497 (2026)
DOI: 10.1002/aelm.202500497