Novel Functional Oxide Materials
Oxides are among the materials with the widest tunability of physical properties. Spanning insulators, semiconductors, metallic conductors and superconductors, magnetic materials, ferro-/antiferro- and other dielectrics, oxides are a materials class with high potential for a new generation of electronic devices for energy and sensing applications. Traditionally, oxides have been synthesized by pulsed laser deposition or sputtering, which both have drawbacks in terms of material quality. A higher material quality can be achieved by molecular beam epitaxy (MBE), which is the growth method used at PDI.
This CReA aims to establish oxides as a key material platform for future electronics by focusing on:
- High-quality, scalable epitaxial synthesis of novel oxide systems to ensure precise control over material properties.
- Comprehensive in-house characterization to investigate structural, electronic, and magnetic properties with advanced spectroscopy and transport measurements.
- Prototypical device demonstration to showcase the potential of oxide-based electronics in real-world applications.
- Seamless integration with established material platforms to enable compatibility with current semiconductor technologies.
By advancing the understanding and fabrication of functional oxides, this research paves the way for innovative, energy-efficient devices, such as next-generation memory, logic, and sensing technologies. The ability to integrate oxides with conventional semiconductors could lead to breakthroughs in quantum information processing, neuromorphic computing, and sustainable electronics. Ultimately, this work supports the development of cutting-edge materials and devices that address critical technological and environmental challenges.
This CReA benefits from exposure to a large extended network of experts through its role as coordinator of the Leibniz ScienceCampus: Growth and Fundamentals of Oxides for Electronic Applications (GraFOX) from 2016–2024.
Selected Publications
- Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1−x)O2 during suboxide molecular beam epitaxy
Authors: Wenshan Chen, Kingsley Egbo, Joe Kler, Andreas Falkenstein, Jonas Lähnemann, Oliver Bierwagen
Source: APL Mater. 13, 011107 (2025)
DOI: https://doi.org/10.1063/5.0243858
- Enabling 2D Electron Gas with High Room-Temperature Electron Mobility Exceeding 100 cm2 Vs−1 at a Perovskite Oxide Interface
Authors: Georg Hoffmann, Martina Zupancic, Aysha A. Riaz, Curran Kalha, Christoph Schlueter, Andrei Gloskovskii, Anna Regoutz, Martin Albrecht, Johanna Nordlander, Oliver Bierwagen
Source: Adv. Mater., 36, 2409076 (2024)
DOI: https://doi.org/10.1002/adma.202409076
- Molecular Beam Epitaxy of β-(InxGa1–x)2O3 on β-Ga2O3 (010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement
Authors: Piero Mazzolini, Charlotte Wouters, Martin Albrecht, Andreas Falkenstein, Manfred Martin, Patrick Vogt, Oliver Bierwagen
Source: ACS Appl. Mater. Interfaces, 16, 12793-12804 (2024)
DOI: 10.1021/acsami.3c19095
- Anisotropy of optical transitions in β-Ga2O3 investigated by polarized photoluminescence excitation spectroscopy
Authors: Moritz Meißner, Nils Bernhardt, Felix Nippert, Benjamin M. Janzen, Zbigniew Galazka, Markus R. Wagner
Source: Appl. Phys. Lett., 124, 152102 (2024)
DOI: 10.1063/5.0189751
- SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes
Authors: Kornelius Tetzner, Kingsley Egbo, Michael Klupsch, Ralph-Stephan Unger, Andreas Popp, Ta-Shun Chou, Saud Bin Anooz, Zbigniew Galazka, Achim Trampert, Oliver Bierwagen, Joachim Würfl
Source: Appl. Phys. Lett., 120, 112110 (2022)
DOI: 10.1063/5.0083032
- β-Gallium oxide power electronics
Authors: Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe, Kimiyoshi Koshi, John Blevins, Oliver Bierwagen, Sriram Krishnamoorthy, Kevin Leedy, Aaron R. Arehart, Adam T. Neal, Shin Mou, Steven A. Ringel, Avinash Kumar, Ankit Sharma, Krishnendu Ghosh, Uttam Singisetti, Wenshen Li, Kelson Chabak, Kyle Liddy, Ahmad Islam, Siddharth Rajan, Samuel Graham, Sukwon Choi, Zhe Cheng, Masataka Higashiwaki
Source: APL Mater. 10, 029201 (2022)
DOI: https://doi.org/10.1063/5.0060327
- Isotopic study of Raman active phonon modes in β-Ga2O3
Authors: Benjamin M. Janzen, Piero Mazzolini, Roland Gillen, Andreas Falkenstein, Manfred Martin, Hans Tornatzky, Janina Maultzsch, Oliver Bierwagen, and Markus R. Wagner
Source: J. Mater. Chem. C, 9, 2311 (2021)
DOI: https://doi.org/10.1039/D0TC04101G