PDI scientists secure DFG funding for two pioneering nitride research projects
/ Announcements
Three scientists from PDI have been awarded two of the nine research projects funded under the DFG Priority Programme SPP 2477 Nitrides4Future – Novel Materials and Device Concepts.
This prestigious programme supports fundamental yet application-oriented research on emerging nitride semiconductors and the advanced device architectures they enable.
With proven expertise in nitride materials science—ranging from conventional group-III nitrides to transition-metal variants—PDI is a pivotal contributor to SPP 2477. The institute’s capabilities span epitaxial growth, structural analysis, and the integration of complex device architectures. Notably, PDI’s leadership in surface-acoustic-wave (SAW) technologies is central to one of the awarded projects, while the second project explores rare-earth nitride heterostructures for advancing thermoelectric performance. Together, these complementary directions underscore PDI’s role in driving innovation across the nitride semiconductor landscape and reaffirm its position at the forefront of materials and device development.
Project 1: Integrated acousto-NEMS on monolithic new-nitride thin films
Principal investigators: Dr. Mingyun Yuan (PDI), Prof. Ian D. Sharp (TU Munich), Dr. Matthias Weiß (University of Münster), Prof. Ha Duong Ngo (HTW Berlin)
This project explores the synthesis of novel aluminum transition-metal nitride materials for the development of integrated SAW devices. The collaborative effort was evaluated as “a highly original approach, which is very ambitious but feasible.” As project coordinator, Dr. Yuan highlights PDI’s commitment to supporting female scientists in leadership roles.
Project 2: Rare-earth nitride heterostructures for integrated thermoelectrics
Principal investigators: Prof. Gregor Koblmüller (TU Berlin), Dr. Duc V. Dinh (PDI), Dr. Markus R. Wagner (PDI/TU Berlin)
This project investigates thermoelectric properties in engineered nitride systems by incorporating transition-metal elements such as scandium and chromium into conventional group-III nitride matrices. By tailoring electronic band structures and phonon transport, the team aims to enhance thermoelectric efficiency. The research includes the synthesis of novel heterostructures, their structural and transport characterization, and the development of integrated thermoelectric modules for on-chip energy harvesting and thermal management.