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Huaide Zhang

PhD Student

+49 30 20377-346

zhang@pdi-berlin.de

Epitaxy

Room: 709

Core research areas

III-V Nanowires for Optoelectronics , Nitride Semiconductors

Publications

  1. Title

    Simultaneously monitoring Ga adsorption and desorption kinetics on GaN(0001) using four in situ techniques

    Author
    H. Zhang, P. John, J. Kang, L. Geelhaar, Y. Cho, O. Brandt
    Source
    APL Mater., 14, 081104 (2026)
    DOI:
    10.1063/5.0345516 (PDI-ID: 3203)
  2. Title

    The structure-bonding-property paradigm in thermoelectrics: Microscale insights from correlative characterization

    Author
    H. Zhang, M. Wuttig, Y. Yu
    Source
    J. Mater. Sci. Technol., 271, 167-176 (2026)
    DOI:
    10.1016/j.jmst.2026.02.012 (PDI-ID: 3172)
  3. Title

    From (In,Ga)N top-down nanowires to pseudo-substrates

    Author
    J. Kang, H. Zhang, A. Campbell, J. Lähnemann, O. Brandt, L. Geelhaar
    Source
    Proc. SPIE, 13582, 135820B (2025)
    DOI:
    10.1117/12.3067374 (PDI-ID: 3098)
  4. Title

    Correlative characterizations reveal the structure‐bonding‐property relationship at a local scale

    Author
    H. Zhang, Y. Zhou, C. Zhou, M. Wuttig, Y. Yu
    Source
    Chem. Methods, 5, 202500009 (2025)
    DOI:
    10.1002/cmtd.202500009 (PDI-ID: 3099)
  5. Title

    Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge

    Author
    W. Chen, K. Egbo, H. Zhang, A. Ardenghi, O. Bierwagen
    Source
    J. Vac. Sci. Technol. A, 42, 032708 (2024)
    DOI:
    10.1116/6.0003453 (PDI-ID: 2951)