These alloys enable the realization of efficient light emitters used for solid-state lighting, display technologies, and diode lasers. Consequently, this material class is now second only to Si as the commercially most important semiconductor. Related to these applications, we recently concluded the project SPRInG [Short Period Superlattices for Rational (In,Ga)N] that was funded by the European Union. In particular, we investigated superlattices made of alternating binary InN and GaN layers as an ordered alternative to (In,Ga)N layers with high In content.

One particularity of GaN is that the common growth direction is polar, and that this polarity has profound implications for the properties of heterostructures. In this context, we carry out studies to compare Ga- and N-polar (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells. Furthermore, we fabricate custom heterostructures for the investigation of fundamental material properties.

As an extension of the set of alloys typically considered as group-III nitrides, our growth efforts focus presently on hexagonal BN (hBN). This research builds up on the growth of hBN with a thickness of few monolayers in the framework of our activity on 2D materials. Beyond that class of materials, hBN is an interesting semiconductor with many unusual properties that has recently attracted increasing attention.


Selected publications

Author: C. Chèze , F. Feix , J. Lähnemann , T. Flissikowski , M. Krysko , P. Wolny , H. Turski , C. Skierbiszewski , O. Brandt
Title: Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at 730 ◦C
Source: Appl. Phys. Lett. , 112 , 022102 ( 2018 )
DOI: 10.1063/1.5009184

Author: C. Chèze , R. Calarco
Title: Self-limited In incorporation in (In,Ga)N/GaN short-period superlattices
Source: Nanosci. Nanotechnol. Lett. , 9 , 1118 ( 2017 )
DOI: 10.1166/nnl.2017.2442

Author: C. Chèze , F. Feix , M. Anikeeva , T. Schulz , M. Albrecht , H. Riechert , O. Brandt , R. Calarco
Title: In/GaN(0001)- (√3 × √3) R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices
Source: Appl. Phys. Lett. , 110 , 072104 ( 2017 )
DOI: 10.1063/1.4976198

Author: F. Feix , T. Flissikowski , C. Chèze , R. Calarco , H. T. Grahn , O. Brandt
Title: Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN
Source: Appl. Phys. Lett. , 109 , 042104 ( 2016 )
DOI: 10.1063/1.4960006

Author: S. Fernández-Garrido , J. Lähnemann , C. Hauswald , M. Korytov , M. Albrecht , C. Chèze , C. Skierbiszewski , O. Brandt
Title: Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy
Source: Phys. Rev. Appl. , 6 , 034017-01 ( 2016 )
DOI: 10.1103/PhysRevApplied.6.034017