Interfaces in epitaxial hetero-structures and nanosystems

A central goal in preparing modern artificial heterostructures and nanomaterials is the control of interfaces and the understanding of their building principles. Interfaces have a crucial effect on both, physical properties and device performance, in particular as structure sizes become smaller. The detailed analysis and understanding of morphology and chemical intermixing of epitaxial interfaces allows a better control during growth and opens the possibility to tune the interface property with the appropriate functionality in nano-structured materials.

Epitaxial heterointerfaces are generally classified as coherent or semicoherent, depending on the epitaxial strain state. We are studying the character of epitaxial strain and strain relieving mechanisms as well as the atomic configuration and translation state of coherent interfaces between dissimilar materials. 

Our research currently focuses on the following topical and methodological issues:

• Epitaxial III-V/III-V, IV/IV and II-VI/III-V heterointerfaces
• Graphene, BN, transition metal dichalcogenide heterostructures
• Interfaces of functional materials: oxides, thin magnetic films, intercalated 2D metals
   
• In-situ and ex-situ synchrotron diffraction (PHARAO at BESSYII, HZB) 
• Low-temperature scanning tunneling microscopy 
• Three-dimensional electron tomography