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Swinging localized electrons

Acoustically excited spin resonances modulate the light emission intensity of color centers in SiC.

Wide bandgap semiconductors contain electrons trapped in localized defects ("color centers"). Because of their atomic-like optical emission, characterized by sharp lines and non-classical statistics, they can be used as single-photons sources. In addition, their long spin coherence times and spin-dependent optical cycles make them very attractive for spintronic applications. Our goal is to exploit their high sensitivity to local lattice distortions to dynamically manipulate their orbital and spin states. By combining acoustically and optically induced transitions, we aim at on-demand excitation of spin quantum states with long coherence times and ultrafast optical readout of the quantum information stored in single color centers.

Current focus points

  • SAW-driven spin transitions: We use the dynamic strain of SAWs as an effective oscillating magnetic field to manipulate the spin degree of freedom of spin centers.
  • Dynamic tuning of light emission: The periodic deformation of the crystal lattice around the color center is used to dynamically modulate the properties of the emitted photons.

Selected publications

Author: T. Vasselon, A. Hernández-Mínguez, M. Hollenbach, G. V. Astakhov, P. V. Santos
Title: Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC
Source: Phys. Rev. Appl. (in press, 2023)

Author: Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov
Title: Acoustically induced coherent spin trapping
Source: Sci. Adv. 7, eabj5030 (2021)

Author: Hernández-Mínguez, A. V. Poshakinskiy, M. Hollenbach, P. V. Santos, G. V. Astakhov
Title: Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature
Source: Phys. Rev. Lett. 125, 107702 (2020)

Author: F. Iikawa, A. Hernández-Mínguez, I. Aharonovich, S. Nakhaie, Y.-T. Liou, J. M. J. Lopes, P. V. Santos
Title: Acoustically modulated optical emission of hexagonal boron nitride layers
Source: Appl. Phys. Lett. 114, 171104 (2019)

Author: S. Lazic, A. Espinha, S. Pinilla Yanguas, C. Gibaja, F. Zamora, P. Ares, M. Chhowalla, W. S. Paz, J. J. Palacios Burgos, A. Hernández-Mínguez, P. V. Santos, H. P. van der Meulen
Title: Dynamically tuned non-classical light emission from atomic defects in hexagonal boron nitride
Source: Commun. Phys. 2, 113 (2019)