New Publication: Topological Boundary States in Engineered Quantum-Dot Molecules

We are pleased to announce the publication of a new paper in Physical Review Research titled “Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots.” This work is a collaboration between PDI scientists Stefan Fölsch and Van Dong Pham, together with researchers from the Center for Spintronics and Quantum Systems (China), the Center for Computational Materials Science, Naval Research Laboratory (Washington, DC), Dahlem Center for Complex Quantum Systems and Fachbereich Physik (Berlin), and NTT Basic Research Laboratories (Japan).

The study is part of the DFG-funded project “Artificial quantum states on semiconductor surfaces created and probed by cryogenic scanning tunneling microscopy.” Using atom manipulation by scanning tunneling microscopy, the team successfully engineered quantum-dot molecules that reveal topological boundary states, as predicted by the Su-Schrieffer-Heeger model.

The research demonstrates how quantum-dot arrays can be designed with atomic-scale precision to explore boundary states in topological systems.

Publication

Title: Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots.
Authors: Van Dong Pham, Yi Pan, Steven C. Erwin, Felix von Oppen, Kiyoshi Kanisawa, and Stefan Fölsch
DOI: 10.1103/PhysRevResearch.6.033268

Scientific Contact

• Dr. Stefan Fölsch, Paul-Drude-Institut fur Festkörperelektronik, Leibniz Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany.
  Email: foelsch(at)pdi-berlin.de