Research from PDI's Nitride Semiconductors CReA Featured by Semiconductor Today
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A research paper with contributions from PDI's Nitride Semiconductors core research area (CReA) has received significant international attention, having been featured on the cover of the Journal of Applied Physics and now highlighted by the industry publication Semiconductor Today.
The work investigates metal-modulated epitaxy (MME)–grown cubic InGaN and demonstrates its potential for efficient red light emission, seen as a key challenge in nitride semiconductor research. As reported by Semiconductor Today, the results underline the relevance of cubic InGaN for future micro-LED applications, where material quality, emission efficiency, and wavelength stability are critical.
The study was led by researchers at Justus Liebig University Giessen, with contributions from the University of Cambridge, Paderborn University, and PDI. PDI scientists Jonas Lähnemann and Aidan Campbell contributed through supervision, writing contributions, and analysis and investigation of the material’s structural and optical properties.
The independent coverage by Semiconductor Today highlights the broader relevance of this work beyond the academic community and reflects the growing visibility of PDI-contributed research in applied semiconductor science and technology.
Read the full article on Semiconductor Today
Title: Cubic InGaN for red emission: Improved phase stability and emission properties by metal-modulated epitaxy
Authors: S. A. Jentsch, M. F. Zscherp, A. Campbell, M. Stein, M. Chia, D. J. As, J. Lähnemann, S. Chatterjee, J. Schörmann
Source: J. Appl. Phys., 138, 225702 (2025)
DOI: 10.1063/5.0305390
Core Research Area (CReA): Nitride Semiconductors