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Dr. Jonas Lähnemann

Senior Scientist

+49 30 20377-450

laehnemann@pdi-berlin.de

ORCID iD https://orcid.org/0000-0003-4072-2369

Semiconductor Spectroscopy

Room: 530

Google Scholar
Web of Science

Core research areas

III-V Nanowires for Optoelectronics , Novel Functional Oxide Materials , Nitride Semiconductors

Projects

Expertise

Responsible scientist for analytical scanning electron microscopy and the Application Laboratory Time-Resolved Cathodoluminescence Spectroscopy. Collaborating with many internal and external partners, Jonas has worked on a broad range of materials spanning from AlN, GaN and hBN for UV applications, over (In,Ga)N and Ga(P,N) in the visible spectral range to (In,Ga)As and In(As,Sb) in the near infrared. He has collected extensive experience in correlating different spatially-resolved techniques, in particular on semiconductor nanowires. Notable work also includes the role of extended defects, such as stacking faults and dislocations, in GaN and carrier diffusion in this material system.

Publications

  1. Title

    Nucleation and faceting in (001) r-GeO2 heteroepitaxy on r-TiO2 by metalorganic vapor phase epitaxy

    Author
    G. Cicconi, M. Bosi, F. Mezzadri, A. Ugolotti, I. Cora, L. Seravalli, H. Tornatzky, J. Lähnemann, M. R. Wagner, P. Bhatt, P. K. Thakur, T.-L. Lee, A. Regoutz, A. Baraldi, D. Bersani, L. Cademartiri, A. Parisini, B. Pécz, L. Miglio, R. Fornari, P. Mazzolini
    Source
    Appl. Surf. Sci., 725, 165788 (2025)
    DOI:
    10.1016/j.apsusc.2025.165788 (PDI-ID: 3140)
  2. Title

    Cubic InGaN for red emission: Improved phase stability and emission properties by metal-modulated epitaxy

    Author
    S. A. Jentsch, M. F. Zscherp, A. Campbell, M. Stein, M. Chia, D. J. As, J. Lähnemann, S. Chatterjee, J. Schörmann
    Source
    J. Appl. Phys., 138, 225702 (2025)
    DOI:
    10.1063/5.0305390 (PDI-ID: 3133)
  3. Title

    Corrigendum to “Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD” [Acta Materialia 297 (2025) 121357]

    Author
    V. Kaganer, D. Spallek, P. John, O. Brandt, J. Lähnemann
    Source
    Acta Mater., 302, 121671 (2025)
    DOI:
    10.1016/j.actamat.2025.121671 (PDI-ID: 3129)
  4. Title

    Optical response of ultrathin GaP nanoantenna with zincblende-to-wurtzite crystal phase transitions

    Author
    E. N. T. Diak, J. Lähnemann, A. Moréac, J.-P. Landesman, K. Loeto, R. R. LaPierre
    Source
    Cryst. Growth Des., 25, 9312-9321 (2025)
    DOI:
    10.1021/acs.cgd.5c01111 (PDI-ID: 3121)
  5. Title

    From (In,Ga)N top-down nanowires to pseudo-substrates

    Author
    J. Kang, H. Zhang, A. Campbell, J. Lähnemann, O. Brandt, L. Geelhaar
    Source
    Proc. SPIE, 13582, 135820B (2025)
    DOI:
    10.1117/12.3067374 (PDI-ID: 3098)