Paul-Drude-Institut für Festkörperelektronik

Researchers from the Core Research Area (CReA) Novel Functional Oxide Materials at PDI, together with international collaborators, have uncovered new insights into how charge carriers move and interact in gallium oxide (Ga₂O₃), a key material for the next generation of high-power electronics and ultraviolet optoelectronics. The findings represent a significant step forward in understanding charge-carrier dynamics in ultrawide bandgap oxides.

We’re pleased to announce that PDI has received funding from the European Regional Development Fund (EFRE) to establish a new Application Lab for Thermal Laser Epitaxy (ATLAS). This capability opens up new opportunities for creating high-quality thin films and expanding the range of materials that can be grown epitaxially, laying the foundation for next-generation electronic, optoelectronic, and quantum devices.

A new study published in ACS Nano, led by researchers from PDI with collaborators from Helmholtz-Zentrum Berlin and QZabre AG, Switzerland, demonstrates the successful growth of above-room-temperature ferromagnetic Fe₃GaTe₂ thin films using molecular beam epitaxy. The findings provide a deeper understanding of 2D ferromagnetic materials and open new pathways toward scalable spintronic heterostructures.

Following an initiative by the Equal Opportunity Officers across the Forschungsverbund Berlin (FVB), all FVB institutes now appoint an Equal Opportunity Representative within their Scientific Advisory Boards (SAB). This role ensures that equality, diversity, and family-friendliness are actively considered in all SAB discussions and decisions, helping to make evaluation and advisory processes fair and transparent.