Semiconducting oxides form a new and highly regarded class of materials in semiconductor technology. Gallium oxide is the typical material for it, promising previously unattainable electronic devices with extreme high-voltage strength and optical transparency in the deep ultraviolet spectral range. Now, for the first time, scientists at the Paul Drude Institute for Solid State Electronics (PDI) have succeeded in dramatically increasing the yield of gallium oxide crystal growth using a catalytic effect.
